CMOS image sensor and method of fabricating the same

Details CMOS image sensor and method of fabricating the same CMOS image sensor and method of fabricating the same

2008-05-06

2008-05-06

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27133, C438S075000

Reexamination Certificate

active

07368771

ABSTRACT:
Provided are a complementary metal oxide semiconductor (CMOS) image sensor and a method of fabricating the same, where the CMOS image sensor includes a photodiode, a drive transistor, a reset transistor, and a selection transistor; the drive transistor includes a threshold voltage adjustment region doped with impurities of a type substantially identical to that of impurities doped into a source and a drain of the drive transistor; and the CMOS image sensor includes pixels with expanded output signal ranges.

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patent: 6218691 (2001-04-01), Chung et al.
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