CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2008-04-18

2009-12-15

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S510000, C257SE21580, C257SE21422, C257SE21545, C257SE21562, C257SE21632

Reexamination Certificate

active

07632730

ABSTRACT:
A CMOS image sensor and a manufacturing method are disclosed. The gates of the transistors are formed in the active region of the unit pixel, and a diffusion region for the photo diode is defined by an ion implantation of impurities to the semiconductor substrate. The patterns of the photoresist that are the masking layer against ion implantation are formed on the semiconductor substrate in such a manner that they have the boundary portion of the isolation layer so as not to make the boundary of the defined photo diode contact with the boundary of the isolation layer. Damages by an ion implantation of impurities at the boundary portion between the diffusion region for the photo diode and the isolation layer are prevented, which reduces dark current of the COMS image sensor.

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