CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2005-12-21

2009-08-25

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S290000, C257S292000, C257SE31121, C257SE31123

Reexamination Certificate

active

07579639

ABSTRACT:
A CMOS image sensor that includes a semiconductor substrate with a plurality of photodiodes arranged at fixed intervals on the semiconductor substrate. A light-shielding layer partially overlaping the plurality of photodiodes and an insulating interlayer are formed on an entire surface of the semiconductor substrate including the plurality of photodiodes. A color filter layer having a plurality of color filters separated by a predetermined gap is formed on the insulating interlayer and a planarization layer is formed over the entire surface of the semiconductor substrate including the color filter layer. A plurality of microlenses are formed on the planarization layer in correspondence with the color filters of the color filter layer, wherein an additional structural layer, disposed between the color filter layer and the insulating interlayer, is provided to close a predetermined gap between the color filters of the color filter layer.

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