CMOS image sensor and manufacturing method thereof

Details CMOS image sensor and manufacturing method thereof CMOS image sensor and manufacturing method thereof

2006-08-10

2009-11-03

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21352

Reexamination Certificate

active

07611940

ABSTRACT:
Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes forming an isolation layer in a semiconductor substrate, defining an active region including a photo diode region and a transistor region; forming a gate insulating layer and a gate electrode on the transistor region; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming an insulating layer over an entire surface of the substrate; implanting fluorine ions in an upper surface of the photo diode region; etching the insulating layer to form insulating sidewalls on sides of the gate electrode; forming a high-concentration diffusion region in the transistor region partially overlapping with the second low-concentration diffusion region; and forming a third low-concentration diffusion region on the upper surface of the photo diode region, the third low-concentration diffusion region having a conductivity type opposite to the first low-concentration diffusion region.

REFERENCES:
patent: 5466612 (1995-11-01), Fuse et al.
patent: 6849886 (2005-02-01), Han
patent: 2005/0062084 (2005-03-01), Han
Chinese Office Action for Application No. 2006101093278; State Intellectual Property Office of People's Republic of China: Dated Oct. 12, 2007.
US Translation of Chinese Office Action titled: CMOS Image Sensor and Manufacturing Method Thereof: Application No. 200610109327.8: State Intellectual Property Office of People's Republic of China: Dated Oct. 12, 2007.

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