CMOS image sensor and image signal detecting method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE27133, C250S208100, C348S308000

Reexamination Certificate

active

07985993

ABSTRACT:
A complementary metal oxide semiconductor (CMOS) image sensor includes a photodiode, a switch and a comparator. The switch transfers a sensing signal to a sensing node from the photodiode. The comparator, which is directly connected to the sensing node, compares the sensing signal of the sensing node with a reference signal. The comparator outputs a signal corresponding to a voltage difference between the sensing signal and the reference signal.

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U.S. Appl. No. 12/828,478, filed Jul. 1, 2010; Inventors Seung hyun Lim and Jeong hwan Lee.

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