Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-26
2011-07-26
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27133, C250S208100, C348S308000
Reexamination Certificate
active
07985993
ABSTRACT:
A complementary metal oxide semiconductor (CMOS) image sensor includes a photodiode, a switch and a comparator. The switch transfers a sensing signal to a sensing node from the photodiode. The comparator, which is directly connected to the sensing node, compares the sensing signal of the sensing node with a reference signal. The comparator outputs a signal corresponding to a voltage difference between the sensing signal and the reference signal.
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U.S. Appl. No. 12/828,478, filed Jul. 1, 2010; Inventors Seung hyun Lim and Jeong hwan Lee.
Ham Seog-Heon
Han Gun-Hee
Kim Dong-Soo
Lee Dong-Myung
Dickey Thomas L
Erdem Fazli
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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