CMOS image sensor and fabricating method thereof

Details CMOS image sensor and fabricating method thereof CMOS image sensor and fabricating method thereof

2005-05-06

2008-07-22

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21634

Reexamination Certificate

active

07402479

ABSTRACT:
A fabricating method of a CMOS image sensor includes the steps of: forming a transfer gate on a semiconductor substrate where a device isolation layer is formed; forming a first n-type ion implantation region for a photodiode beneath a surface of the semiconductor substrate, the first n-type ion implantation region being aligned at one side of the transfer gate and having a first width and a first ion implantation depth; forming a second n-type ion implantation region aligned at one side of the transfer gate, the second n-type ion implantation region enclosing the first n-type ion implantation region and having a second width wider than the first width and a second ion implantation depth deeper than the first ion implantation depth and a second depth; forming a p-type ion implantation region between a surface of the semiconductor substrate and the first n-type ion implantation region, the p-type ion implantation region being aligned at one side of the transfer gate and partially overlapped with the first n-type ion implantation region; forming spacers on both sidewalls of the transfer gate; and forming a floating diffusion region at the other side of the transfer gate.

REFERENCES:
patent: 2003/0151076 (2003-08-01), Kim

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