CMOS image device with polysilicon contact studs

Details CMOS image device with polysilicon contact studs CMOS image device with polysilicon contact studs

2005-02-10

2008-05-27

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S293000, C257SE27130

Reexamination Certificate

active

07378693

ABSTRACT:
A CMOS image device comprises a pixel array region including a photo diode region, a floating diffusion region, and at least one MOS transistor having a gate and a junction region, a CMOS logic region disposed around the pixel array region, the CMOS logic region including a plurality of nMOS transistors and pMOS transistors, and contact studs formed on the floating diffusion region and the junction region in the pixel array region, the contact studs comprising impurity-doped polysilicon layers.

REFERENCES:
patent: 6017813 (2000-01-01), Kuo
patent: 6194258 (2001-02-01), Wuu
patent: 6639261 (2003-10-01), Rhodes
patent: 2004/0089883 (2004-05-01), Kim
patent: 2006/0214201 (2006-09-01), Rhodes
patent: 2000133792 (2000-05-01), None
patent: 2000340780 (2000-12-01), None

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