CMOS gate structure comprising predoped semiconductor gate...

Details CMOS gate structure comprising predoped semiconductor gate... CMOS gate structure comprising predoped semiconductor gate...

2005-06-16

2008-09-02

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C257SE21637

Reexamination Certificate

active

07419867

ABSTRACT:
By predoping of a layer of deposited semiconductor gate material by incorporating dopants during the deposition process, a high uniformity of the dopant distribution may be achieved in the gate electrodes of CMOS devices subsequently formed in the layer of gate material. The improved uniformity of the dopant distribution results in reduced gate depletion and reduced threshold voltage shift in the transistors of the CMOS devices.

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