CMOS eprom sense amplifier

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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365185, 365210, G11C 700

Patent

active

047259841

ABSTRACT:
Individual CMOS floating-gate memory cells capable of storing data are arranged in an array structure and selected with horizontal and vertical access lines. Current flow through the array cells is measured, amplified, and then compared with an unprogrammed cell using the sense amplifier of the present invention. The sense amplifier tolerates increased variation in the characteristics of programmed or unprogrammed cells and therefore increases the manufacturing yields of the arrays. It additionally achieves fast accessing and sensing of the stored data.

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patent: 4464591 (1984-08-01), Rapp
patent: 4494219 (1985-01-01), Tanaka et al.

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