Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-08
2011-03-08
Graybill, David E (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
07902014
ABSTRACT:
Described herein are a device utilizing a gate electrode material with a single work function for both the pMOS and nMOS transistors where the magnitude of the transistor threshold voltages is modified by semiconductor band engineering and article made thereby. Further described herein are methods of fabricating a device formed of complementary (pMOS and nMOS) transistors having semiconductor channel regions which have been band gap engineered to achieve a low threshold voltage.
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Brask Justin K.
Chau Robert S.
Datta Suman
Doyle Brian S.
Jin Been-Yih
Blakely , Sokoloff, Taylor & Zafman LLP
Graybill David E
Intel Corporation
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