CMOS (Complementary metal oxide semiconductor) technology...

Details CMOS (Complementary metal oxide semiconductor) technology... CMOS (Complementary metal oxide semiconductor) technology...

2007-06-07

2008-12-09

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21632

Reexamination Certificate

active

07462528

ABSTRACT:
A method for forming semiconductor transistor. The method comprises providing a structure including (a) a semiconductor region, and (b) first and second dopant source regions on and in direct physical contact with the semiconductor region, wherein each region of the first and second dopant source regions comprises a dielectric material which contains dopants; causing the dopants to diffuse from the first and second dopant source regions into the semiconductor region so as to form first and second source/drain extension regions, respectively, wherein the first and second source/drain extension regions define a channel region disposed between; forming a gate dielectric region on a channel region; and forming a gate region on the gate dielectric region, wherein the gate dielectric region electrically insulates the gate region from the channel region.

REFERENCES:
patent: 5518945 (1996-05-01), Bracchitta et al.
patent: 5770490 (1998-06-01), Frenette et al.
patent: 5960270 (1999-09-01), Misra et al.
patent: 5985768 (1999-11-01), Speranza et al.
patent: 6103559 (2000-08-01), Gardner et al.
patent: 6117739 (2000-09-01), Gardner et al.
patent: 6157064 (2000-12-01), Huang
patent: 6492249 (2002-12-01), Xiang et al.
patent: WO97/13273 (1997-04-01), None

Affiliated with

Also associated with

Rating

CMOS (Complementary metal oxide semiconductor) technology... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS (Complementary metal oxide semiconductor) technology..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS (Complementary metal oxide semiconductor) technology... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4045173