CMOS-compatible light emitting aperiodic photonic structures

Details CMOS-compatible light emitting aperiodic photonic structures CMOS-compatible light emitting aperiodic photonic structures

2005-04-25

2008-08-05

Clark, S. V (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S624000, C438S038000

Reexamination Certificate

active

07407896

ABSTRACT:
A fabrication method and materials produce high quality aperiodic photonic structures. Light emission can be activated by thermal annealing post growth treatments when thin film layers of SiO2and SiNxor Si-rich oxide are used. From these aperiodic structures, that can be obtained in different vertical and planar device geometries, the presence of aperiodic order in a photonic device provides strong group velocity reduction (slow photons), enhanced light-matter interaction, light emission enhancement, gain enhancement, and/or nonlinear optical properties enhancement.

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