Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-12-19
2006-12-19
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S189050
Reexamination Certificate
active
07151706
ABSTRACT:
A nonvolatile semiconductor memory circuit includes a selection line, a first bit line, a second bit line, a first MIS transistor having a first gate coupled to the selection line, a first drain coupled to the first bit line via a first node, and a first source coupled to a predetermined potential, a second MIS transistor having a second gate coupled to the selection line, a second drain coupled to the second bit line via a second node, and a second source coupled to the predetermined potential, and a latch circuit coupled to the first node and the second node to store data responsive to a signal difference between the first node and the second node, wherein the selection line is operative to supply a write potential that creates a lingering change in a threshold voltage of one of the first MIS transistor and the second MIS transistor.
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Elms Richard
Ladas & Parry LLP
Nguyen N
NSCORE Inc.
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