Cluster tool with integrated metrology chamber for...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S007000, C438S706000, C438S716000

Reexamination Certificate

active

07846848

ABSTRACT:
The embodiments of the invention relate to a method and apparatus for measuring the etch depth in a semiconductor photomask processing system. In one embodiment, a method for etching a substrate includes etching a transparent substrate in an etch chamber coupled to a vacuum transfer chamber of a processing system, transferring the transparent substrate to a measurement cell coupled to the processing system, and measuring at least one of etch depth or critical dimension using a measurement tool in the measurement cell.

REFERENCES:
patent: 4447731 (1984-05-01), Kuni et al.
patent: 4767496 (1988-08-01), Hieber
patent: 4911103 (1990-03-01), Davis et al.
patent: 5109430 (1992-04-01), Nishihara et al.
patent: 5171393 (1992-12-01), Moffat
patent: 5452521 (1995-09-01), Niewmierzycki
patent: 5653894 (1997-08-01), Ibbotson et al.
patent: 5798529 (1998-08-01), Wagner
patent: 5913102 (1999-06-01), Yang
patent: 5926690 (1999-07-01), Toprac et al.
patent: 5944940 (1999-08-01), Toshima
patent: 5948203 (1999-09-01), Wang
patent: 5963329 (1999-10-01), Conrad et al.
patent: 5980766 (1999-11-01), Flamm et al.
patent: 6001699 (1999-12-01), Nguyen et al.
patent: 6004706 (1999-12-01), Ausschnitt et al.
patent: 6007675 (1999-12-01), Toshima
patent: 6027842 (2000-02-01), Ausschnitt et al.
patent: 6033814 (2000-03-01), Burdorf et al.
patent: 6054710 (2000-04-01), Bruggeman
patent: 6060022 (2000-05-01), Pang et al.
patent: 6124212 (2000-09-01), Fan et al.
patent: 6129807 (2000-10-01), Grimbergen et al.
patent: 6143081 (2000-11-01), Shinriki et al.
patent: 6148239 (2000-11-01), Funk et al.
patent: 6161054 (2000-12-01), Rosenthal et al.
patent: 6166509 (2000-12-01), Wyka et al.
patent: 6175417 (2001-01-01), Do et al.
patent: 6178239 (2001-01-01), Kishinsky et al.
patent: 6183594 (2001-02-01), Nazzal
patent: 6225639 (2001-05-01), Adams et al.
patent: 6245581 (2001-06-01), Bonser et al.
patent: 6313596 (2001-11-01), Wyka et al.
patent: 6368975 (2002-04-01), Balasubramhanya et al.
patent: 6388253 (2002-05-01), Su
patent: 6411389 (2002-06-01), Rushford
patent: 6413147 (2002-07-01), Litvak
patent: 6413867 (2002-07-01), Sarfaty et al.
patent: 6424417 (2002-07-01), Cohen et al.
patent: 6424733 (2002-07-01), Langley
patent: 6454417 (2002-09-01), Takamoto et al.
patent: 6455437 (2002-09-01), Davidow et al.
patent: 6479309 (2002-11-01), Wright
patent: 6486492 (2002-11-01), Su
patent: 6525829 (2003-02-01), Powell et al.
patent: 6625497 (2003-09-01), Fairbairn et al.
patent: 6689519 (2004-02-01), Brown et al.
patent: 6707544 (2004-03-01), Hunter et al.
patent: 6721045 (2004-04-01), Hunter
patent: 6762130 (2004-07-01), Laaksonen et al.
patent: 6811370 (2004-11-01), Buermann
patent: 6961626 (2005-11-01), Paik
patent: 7076320 (2006-07-01), Phan et al.
patent: 7250309 (2007-07-01), Mak
patent: 7601272 (2009-10-01), Nguyen et al.
patent: 2001/0037994 (2001-11-01), Ezaki
patent: 2001/0042845 (2001-11-01), van der Muehlen et al.
patent: 2002/0072003 (2002-06-01), Brill et al.
patent: 2002/0147960 (2002-10-01), Jevtic et al.
patent: 2002/0155629 (2002-10-01), Fairbairn et al.
patent: 2002/0160628 (2002-10-01), Okoroanyanwu et al.
patent: 2002/0171828 (2002-11-01), Cohen et al.
patent: 2003/0000922 (2003-01-01), Subramanian et al.
patent: 2003/0045098 (2003-03-01), Verhaverbeke et al.
patent: 2003/0045131 (2003-03-01), Verbeke et al.
patent: 2003/0052084 (2003-03-01), Tabery et al.
patent: 2003/0092281 (2003-05-01), Ramachandramurthy et al.
patent: 2003/0228532 (2003-12-01), Mui et al.
patent: 2004/0021097 (2004-02-01), Preece
patent: 2004/0021856 (2004-02-01), Nishiyama et al.
patent: 2004/0200574 (2004-10-01), Davis et al.
patent: 2004/0203177 (2004-10-01), Davis et al.
patent: 2005/0085090 (2005-04-01), Mui et al.
patent: 2005/0207875 (2005-09-01), Kim
patent: 2006/0154388 (2006-07-01), Lewington et al.
patent: 0 727 715 (1996-08-01), None
patent: 0727715 (1996-08-01), None
patent: 1 079 426 (2001-02-01), None
patent: 1079428 (2001-02-01), None
patent: 1 083 424 (2001-03-01), None
patent: 1083424 (2001-03-01), None
patent: 1496543 (2005-01-01), None
patent: 1496543 (2005-01-01), None
patent: 1496543 (2005-01-01), None
patent: 61 290312 (1986-12-01), None
patent: 61290312 (1986-12-01), None
patent: 10-2003 0059634 (2003-07-01), None
patent: 10-2006 0053265 (2006-05-01), None
patent: 10-2006 0081365 (2006-07-01), None
patent: WO-0109934 (2001-02-01), None
patent: WO-0184382 (2001-11-01), None
patent: WO-0209170 (2002-01-01), None
patent: WO-0237186 (2002-05-01), None
patent: WO-03003447 (2003-01-01), None
patent: WO-2004030050 (2004-04-01), None
EP Search Report for 07022412, Jun. 16, 2008,copy consists of 4 unnumbered pages.
Extended European Search Report for EP07022412, Oct. 7, 2008, copy consists of 8 unnumbered pages.
Korean Office Action dated Feb. 24, 2009 for Application No. 10-2007-0118372. (APPM/009296 KORS 02).
Chinese Official Letter of application No. 2007101877167 (APPM/9296CN02) dated Dec. 26, 2008.
Notice of Final Rejection dated Sep. 28, 2009 for Korean Patent Application No. 10-2007-118372. (APPM/009296 KORS 02).
Yang, et al., “Line-Profile and Critical Dimension Measurements Using a Normal Incidence Optical Metrology System,” Proceedings of SPIE vol. 4689, Mar. 2002. cited by other.
Kota, et al., “Advanced Process Control for Polysilicon Gate Etching Using Integrated Optical CD Metrology”, Proceedings of SPIE, vol. 5044 (2003) pp. 90-96. cited by other.
Anthony J. Toprac, “AMD's Advanced Process Control of Poly-gate Critical Dimension”, SPIE Conference on Process, Equipment and Materials Control in Integrated Circuit Manufacturing, Sep. 1999, Santa Clara, CA. SPIE, vol. 3882. cited by other.
Lee, M.E., “Analysis of Reflectometry and Ellipsometry Data from Patterned Structures”, Characterization and Metrology for ULSI Technology: 1998 International Conference, ed. D.G. Seiler, et al., 1998, pp. 331-335. cited by other.
McIntosh, J.M., et al., “Approach to CD SEM Metrology Utilizing the Full Waveform Signal”, Proceedings of the SPIE, vol. 3332, pp. 51-60, Feb. 23, 1998. cited by other.
Ausschnit, Christopher P., et al., “Seeing the Forest for the Trees: A New Approach to CD Control,” Ed. Bhanwar Singh, Proceeding of the SPIE, vol. 3332, pp. 212-220, Feb. 23-25, 1998. cited by other.
Moharam, M.G., et al., “Stable Implementation of the Rigorous Coupled-Wave Analysis for Surface-Relief Gratings: Enhanced Transmittance Matrix Approach,” Journal of the Optical Society of America, vol. 12, No. 5, pp. 1077-1086, May 1995. cited byother.
Chateau, Nicolas, “Algorithm for the Rigourous Coupled-Wave Analysis of Grating Diffusion,” Journal of the Optical Society of America, vol. 11, No. 4, pp. 1321-1331, Apr. 1994. cited by other.
G.P. Kota, et al., “Integrated CD Metrology for Poly Si Etching”, Lam Research Corporation, Plasma Etch Users Group Meeting, Jan. 17, 2002. cited by other.
Raymond, Christopher J., “Angle-Resolved Scatterometry of Semiconductor Manufacturing”, Microlithography World, Winter 2000, pp. 18-23. cited by other.
Extended European Search Report dated May 3, 2006 for European Application No. 06250044.2-2222. cited by other.
Collard, et al. “Integrated phase shift measurements for advanced mask etch process control,” Proceedings of the SPIE—The International Society for Optical Engineering SPIE-Int. Soc. Eng. USA, vol. 5256, 2003, pp. 76-84, XP002376855. cited by other.
EP Search Report for 07022412, Jun. 16, 2008, copy consists of 4 unnumbered pages. cited by other.
Prosecution History for U.S. Appl. No. 11/031,400. cited by other.
Prosecution History for U.S. Appl. No. 11/532,195. cited by other.
Search Report for Taiwan Invention Patent Application No. 095100110 dated Dec. 22, 2009.
Prosecution History of U.S. Appl. No. 11/031,400 as of Mar. 9, 2010.
Prosecution History of U.S. Appl. No. 11/561,995 as of Mar. 9, 2010.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Cluster tool with integrated metrology chamber for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cluster tool with integrated metrology chamber for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cluster tool with integrated metrology chamber for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4222898

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.