Cleave initiation using varying ion implant dose

Details Cleave initiation using varying ion implant dose Cleave initiation using varying ion implant dose

2008-05-12

2010-10-26

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S428000, C257S607000, C257S617000, C257SE21568, C257SE21570

Reexamination Certificate

active

07820527

ABSTRACT:
An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material.

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