Cleaning solution and method for selectively removing layer...

Details Cleaning solution and method for selectively removing layer... Cleaning solution and method for selectively removing layer...

2007-09-04

2007-09-04

Wilczcwski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S664000, C438S683000, C438S738000, C438S742000, C438S754000

Reexamination Certificate

active

10728517

ABSTRACT:
A cleaning solution selectively removes a titanium nitride layer and a non-reacting metal layer. The cleaning solution includes an acid solution and an oxidation agent with iodine. The cleaning solution also effectively removes a photoresist layer and organic materials. Moreover, the cleaning solution can be employed in tungsten gate electrode technologies that have been spotlighted because of the capability to improve device operation characteristics.

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English Translation of Detailed Description—JP 2000-133635.
“Making Ion Implanted Self Aligned FET Using Silicide Metallurgy,” IBM Technical Disclosure Bulletin, vol. 14, Issue No. 12, May 1, 1972, pp. 3687-3688.
English Abstract****.

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