Cleaning of plasma chamber walls using noble gas cleaning step

Details Cleaning of plasma chamber walls using noble gas cleaning step Cleaning of plasma chamber walls using noble gas cleaning step

2011-06-21

2011-06-21

Markoff, Alexander (Department: 1711)

Cleaning and liquid contact with solids

Processes

Combined

C134S001000, C134S001100, C134S026000, C134S022180, C134S001200, C134S001300

Reexamination Certificate

active

07964039

ABSTRACT:
An improved reaction chamber cleaning process is provided for removing water residues that makes use of noble-gas plasma reactions. The method is easy applicable and may be combined with standard cleaning procedure. A noble-gas plasma (e.g. He) that emits high energy EUV photons (E>20 eV) which is able to destruct water molecules to form electronically excited oxygen atoms is used to remove the adsorbed water.

REFERENCES:
patent: 5221426 (1993-06-01), Tessier et al.
patent: 2005/0016838 (2005-01-01), Murata et al.
patent: 2005/0133059 (2005-06-01), Chen et al.
patent: 2006/0203239 (2006-09-01), Powell et al.
Kuo et al., “Room-temperature copper etching based on a plasma-copper reaction.” Applied Physics Letters, 2001, vol. 78, No. 7 (2001).
Macko et al., Plasma Sources Sci. Technol., 13 (2004), p. 251-262.
Urbanowicz et al., “Effect of Helium Plasma on Low-k damage during Dry Resist Strip” Proceedings of plasma etch and strip workshop, Leuven, 2007.

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