Methods of forming blind wafer interconnects, and related...

Details Methods of forming blind wafer interconnects, and related... Methods of forming blind wafer interconnects, and related...

2011-08-02

2011-08-02

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S639000, C438S675000

Reexamination Certificate

active

07989345

ABSTRACT:
Methods for forming blind wafer interconnects (BWIs) from the back side surface of a substrate structure to the underside of a bond pad on the opposing surface includes the formation of a blind hole from the back side surface, forming a passivating layer therein, removing passivation material from the blind hole bottom, depositing at least one conductive layer within the blind hole, and filling the blind hole with solder or other conductive material or a dielectric material.

REFERENCES:
patent: 5275330 (1994-01-01), Isaacs et al.
patent: 6076726 (2000-06-01), Hoffmeyer et al.
patent: 6716737 (2004-04-01), Plas et al.
patent: 6864172 (2005-03-01), Noma et al.
patent: 2006/0043154 (2006-03-01), Kirby et al.
patent: 2006/0205211 (2006-09-01), Kirby
patent: 2007/0164419 (2007-07-01), Sherrer et al.

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