Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-06-06
2008-11-25
Tran, Binh X (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S747000, C438S749000, C438S751000, C216S089000, C216S099000
Reexamination Certificate
active
07456113
ABSTRACT:
The present invention is a method of use of a novel cleaning solution in a single wafer cleaning process. According to the present invention the method involves using a cleaning solution in a single wafer mode and the cleaning solution comprises at least ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. Moreover, the present invention also teaches a method of combining an ammonia hydroxide, hydrogen peroxide, and chelating agent step with a short HF step in a fashion that minimizes process time in a way that the entire method removes aluminum and iron contamination efficiently without etching too much oxide.The single wafer cleaning processes may also be used to increase the yield of high-grade reclaimed wafers.
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Blakely , Sokoloff, Taylor & Zafman LLP
Tran Binh X
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