Cleaning and drying method and apparatus

Details Cleaning and drying method and apparatus Cleaning and drying method and apparatus

2005-01-04

2005-01-04

Kornakov, M. (Department: 1746)

Cleaning and liquid contact with solids

Processes

Using sequentially applied treating agents

C134S002000, C134S003000, C134S026000, C216S096000, C510S175000, C438S906000

Reexamination Certificate

active

06837944

ABSTRACT:
A method of cleaning semiconductor wafers before the epitaxial deposition comprising (A) etching silicon wafers with HF; (B) rinsing the etched wafers with ozonated ultrapure water; (C) treating the rinsed wafers with dilute SC1; (D) rinsing the treated wafers; (E) treating the wafers with dilute HF; (F) rinsing the wafers with DI water; (G) drying the wafers with nitrogen and a trace amount of IPA; wherein steps (E) through (G) are conducted in a single dryer chamber and wafers are not removed from the chamber between steps. A system comprising a single tank adapted for cleaning, etching, rinsing, and drying the wafers has means to inject HF into a DI water stream.

REFERENCES:
patent: 5727578 (1998-03-01), Matthews
patent: 5911837 (1999-06-01), Matthews
patent: 6214736 (2001-04-01), Rotondaro et al.
patent: 6495099 (2002-12-01), Verhaverbeke et al.
patent: 20020102852 (2002-08-01), Verhaverbeke et al.
Patruno et al. In-situ Rinse HF-Last for Pre-Epitaxy Cleaning, UCPSS, 1994, pp. 247-250.

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