Clad plate for forming interposer for semiconductor device,...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support

Reexamination Certificate

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C029S017200, C029S017300, C029S592100

Reexamination Certificate

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06949412

ABSTRACT:
A clad plate for forming an interposer for a semiconductor device which can be manufactured at low cost and has good characteristics, an interposer for a semiconductor device, and a method of manufacturing them. Copper foil materials (19, 24, 33) forming conductive layers (10, 17, 18) and nickel plating (20, 21) forming etching stopper layers (11, 12) are formed and pressed to form a clad plate (34) for forming an interposer for a semiconductor device. Thus, a clad plate (34) for forming an interposer for a semiconductor device is manufactured. The clad plate (34) is selectively etched to form a columnar conductor (17), and an insulating layer (13) is formed on the copper foil material forming a wiring layer (10). A bump (18) for connection of a semiconductor chip and the wiring layer (10) are formed on the opposite side to the side on which the columnar conductor (17) is formed. Thus, an interposer for a semiconductor device is manufactured.

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patent: 5683942 (1997-11-01), Kata et al.
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Abstract of JP, 2000-188455 published, Jul. 4, 2000.
Abstract of JP, 1-224184, published Sep. 7, 1989.
Patent Abstract DialogIP of “JP 10074807 A, published Mar. 17, 1998, entitled Flexible Film and Semiconductor Device Having it, applicant NEC Corp”.

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