Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-07-24
2007-07-24
Mai, Son L. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S226000, C327S538000, C327S541000
Reexamination Certificate
active
11172256
ABSTRACT:
An internal supply voltage generation circuit is provided that is within a semiconductor memory device, and that is configured to generate an internal supply voltage to a memory array in the semiconductor memory device. The internal supply voltage generation circuit includes an internal driving unit, an internal transmission unit, and an internal sensing unit. The internal driving unit is configured to generate a driving current and a preliminary voltage responsive to an external supply voltage that is supplied from external to the semiconductor memory device, and it varies a magnitude of the driving current responsive to a driving control signal. The internal transmission unit is configured to generate the internal supply voltage responsive to the preliminary voltage from the internal driving unit, and to vary a level of the internal supply voltage to be at least a defined voltage difference less than a boosted voltage. The boosted voltage is greater than the external supply voltage. The internal sensing unit is configured to generate the driving control signal responsive to the internal supply voltage so that the internal supply voltage is maintained at a constant level.
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Choi Sung-Ho
Lee Seung-Hoon
Shin Jun-Ho
Mai Son L.
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
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