Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-30
2000-08-01
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 67, 257 74, H01L 29786, H01L 27105
Patent
active
060970650
ABSTRACT:
A circuit and method for an improved inverter is provided. The present invention capitalizes on a switched source impedance to prevent subthreshold leakage current at standby in low voltage CMOS circuits. The switched source impedance is provided by dual-gated transistors. The dual gates of the transistors are biased to modify the threshold voltage of the transistors (V.sub.t). This design provides fast switching capability for low power battery operated CMOS circuits and systems. The devices can be used in a variety of applications, digital and analog, wherever a more compact structure with low power consumption and fast response time is needed.
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Forbes Leonard
Noble Wendell P.
Jackson, Jr. Jerome
Micro)n Technology, Inc.
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