Circuits and methods for adaptive write bias driving of...

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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Details

C365S158000, C365S163000, C365S175000

Reexamination Certificate

active

07920405

ABSTRACT:
A non-volatile memory device includes a memory cell array including a memory cell array having word lines, bit lines, and non-volatile memory cells, each non-volatile memory cell having a variable resistive material and an access element connected between the corresponding word line and the corresponding bit line. The variable resistive material has a resistance level that varies according to data to be stored. A selection circuit selects at least one non-volatile memory cell in which data will be written. An adaptive write circuit/method supplies a write bias to the selected non-volatile memory cell through the bit line connected to the selected non-volatile memory cell to write data in the selected non-volatile memory cell and varies (e.g., increases) the write bias until the resistance level of the selected non-volatile memory cell varies.

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Notice of Allowance, KR Application No. 10-2006-0131245, Jan. 22, 2008.

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