Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-04-05
2011-04-05
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S158000, C365S163000, C365S175000
Reexamination Certificate
active
07920405
ABSTRACT:
A non-volatile memory device includes a memory cell array including a memory cell array having word lines, bit lines, and non-volatile memory cells, each non-volatile memory cell having a variable resistive material and an access element connected between the corresponding word line and the corresponding bit line. The variable resistive material has a resistance level that varies according to data to be stored. A selection circuit selects at least one non-volatile memory cell in which data will be written. An adaptive write circuit/method supplies a write bias to the selected non-volatile memory cell through the bit line connected to the selected non-volatile memory cell to write data in the selected non-volatile memory cell and varies (e.g., increases) the write bias until the resistance level of the selected non-volatile memory cell varies.
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Cho Woo-Yeong
Kang Sang-Beom
Oh Hyung-Rok
Park Joon-min
Myers Bigel & Sibley & Sajovec
Phan Trong
Samsung Electronics Co,. Ltd.
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