Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2007-04-10
2007-04-10
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C438S118000, C428S343000, C428S306600
Reexamination Certificate
active
10724092
ABSTRACT:
A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for the mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200–250° C.).
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Anjoh Ichiro
Eguchi Shuji
Hattori Rie
Ishii Toshiak
Kitano Makoto
Antonelli, Terry Stout and Kraus, LLP.
Doty Heather A.
Jr. Carl Whitehead
Renesas Technology Corp.
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