Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-16
2008-10-21
Malsawma, Lex (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21581
Reexamination Certificate
active
07439172
ABSTRACT:
A method for manufacturing a circuit includes the step of providing a first wiring level comprising first wiring level conductors separated by a first wiring level dielectric material. A first dielectric layer with a plurality of interconnect openings and a plurality of gap openings is formed above the first wiring level. The interconnect openings and the gap openings are pinched off with a pinching dielectric material to form relatively low dielectric constant (low-k) volumes in the gap openings. Metallic conductors comprising second wiring level conductors and interconnects to the first wiring level conductors are formed at the interconnect openings while maintaining the relatively low-k volumes in the gap openings. The gap openings with the relatively low-k volumes reduce parasitic capacitance between adjacent conductor structures formed by the conductors and interconnects.
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U.S. Appl. No. 11/670,524, filed Fanuary 2, 2007 titled Microelectronic Circuit Structure with Layered Low Dielectric Constant Regions and Method of Forming Same of Clevenger et al.
Clevenger Lawrence A.
Colburn Matthew E.
Hsu Louis C.
Li Wai-Kin
International Business Machines - Corporation
Malsawma Lex
Morris, Esq. Daniel P.
Ryan & Mason & Lewis, LLP
Trice Kimberly
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