Circuit pre-charge to sense a memory line

Details Circuit pre-charge to sense a memory line Circuit pre-charge to sense a memory line

2011-05-24

2011-05-24

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Read/write circuit

Precharge

C365S185250

Reexamination Certificate

active

07948820

ABSTRACT:
Commonly, read times of a memory line are slowed due to voltage overshoot and/or voltage undershoot. To eliminate these problems, a control component can manage voltage while a leakage component manages timing of voltage. This allows for a line pre-charge that produces increase read times. The control component can implement as a variable resistor that modifies value to compensate for temperature. The leakage component can include a capacitor configuration that allows voltage to pass.

REFERENCES:
patent: 2008/0175062 (2008-07-01), Tran

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