Circuit for reducing stand-by current induced by defects in memo

Details Circuit for reducing stand-by current induced by defects in memo Circuit for reducing stand-by current induced by defects in memo

1998-07-02

2000-03-14

Dinh, Son T.

Static information storage and retrieval

Powering

Data preservation

365200, G11C 700

Patent

active

060381914

ABSTRACT:
A circuit for reducing the stand-by current of semiconductor device is disclosed in a number of embodiments. In a first embodiment, a first conductive line (302), such as a bit line or common capacitor plate in a DRAM, is charged to a first potential in a stand-by state. A second conductive line (304), such as a word line in a DRAM, is driven to the first potential in the stand-by state in the event a short circuit condition exists between the first conductive line (302) and the second conductive line (304). In a second embodiment, a second conductive line (404) in a semiconductor device is 34w isolated from other circuits in the semiconductor device in a stand-by mode. This allows the second conductive line (404) to rise to a short circuit potential in the event a short circuit condition exists between the second conductive line (404) and a short circuit potential.

REFERENCES:
patent: 5956275 (1999-09-01), Duesman
patent: 5959907 (1999-09-01), Kim et al.

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