Static information storage and retrieval – Read/write circuit – Complementing/balancing
Patent
1992-11-06
1995-03-28
Yoo, Do Hyun
Static information storage and retrieval
Read/write circuit
Complementing/balancing
365196, 365203, G11C 700
Patent
active
054023785
ABSTRACT:
A semiconductor memory device using a low level supply voltage has separation gates for isolating adjacent bit lines. The device may be constructed with a circuit for receiving a high voltage supplied by a high voltage generator resident upon the chip so as to provide the separation gates with a voltage increased at least by the amount of the threshold voltage of the separation gates over the supply voltage.
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Mosaid Design, "An Analysis of the Hitachi HM511000 1Mx1 CMOS DRAMs", Mar. 1988, p. 58.
Min Kyung-Youl
Seok Yong-Sik
Bushnell Robert E.
Samsung Electronics Co,. Ltd.
Yoo Do Hyun
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