Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2005-01-04
2005-01-04
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S723000, C257S787000, C438S106000
Reexamination Certificate
active
06838776
ABSTRACT:
In one embodiment, circuit device (15) is placed within an opening of a conductive layer (10) which is then partially encapsulated with an encapsulant (24) so that the active surface of the circuit device (15) is coplanar with the conductive layer (10). In this embodiment, at least a portion of the conductive layer (10) may be used as a reference voltage plane (e.g. a ground plane). In one embodiment, circuit device (115) is placed on a conductive layer (100) such that an active surface of circuit device (115) is between conductive layer (100) and an opposite surface of circuit device (115). In this embodiment, conductive layer (100) has at least one opening (128) to expose the active surface of circuit device (115). The encapsulant (24, 126, 326) may be electrically conductive for some embodiments, and electrically non-conductive for other embodiments.
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Leal George R.
Mangrum Marc Alan
Prack Edward R.
Sawyer Brian D.
Wenzel Robert J.
Clark Jasmine
Freescale Semiconductor Inc.
Hill Susan C.
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