Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2006-05-30
2006-05-30
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S782000, C257S784000, C257S778000, C257S737000, C257S738000
Reexamination Certificate
active
07053492
ABSTRACT:
The overflow of a brazing material (19) from a die pad (11) is prevented by forming a second plating film (14B) on the surface of the die pad (11). The second plating film (14B) is provided around the surface of the die pad11so as to enclose an area where a semiconductor element (13) is mounted. In a step of mounting the semiconductor element (13) on the die pad (11) with the brazing material (19), the brazing material (19) overflows from the first plating film (14A) when the semiconductor element (13) is mounted on the upper part of the molten brazing material. However, the second plating film (14B) functions as a blocking area by which the overflow of the brazing material is prevented. Therefore, a short circuit can be prevented from arising between the die pad (11) and the bonding pad (12) because of the brazing material that has spread.
REFERENCES:
patent: 5756380 (1998-05-01), Berg et al.
patent: 6261864 (2001-07-01), Jung et al.
patent: 6528893 (2003-03-01), Jung et al.
patent: 6617680 (2003-09-01), Chien-Chih et al.
patent: 6635956 (2003-10-01), Sakamoto et al.
patent: 6703696 (2004-03-01), Ikenaga et al.
patent: 6706547 (2004-03-01), Sakamoto et al.
patent: 6737736 (2004-05-01), Abe et al.
patent: 6818538 (2004-11-01), Chiang et al.
patent: 6889428 (2005-05-01), Igarashi et al.
patent: 6955942 (2005-10-01), Kobayashi et al.
patent: 6964918 (2005-11-01), Fan et al.
patent: 2002/0133943 (2002-09-01), Sakamoto et al.
patent: 2005/0088806 (2005-04-01), Kato et al.
patent: 2001-352034 (2001-12-01), None
Kusano Kazuhisa
Sakamoto Noriaki
Takahashi Kouji
Fish & Richardson P.C.
Flynn Nathan J.
Kanto Sanyo Semiconductors Co., Ltd.
Mandala Jr. Victor A.
Sanyo Electric Co,. Ltd.
LandOfFree
Circuit device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Circuit device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3535689