Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2006-12-19
2009-06-16
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S226000
Reexamination Certificate
active
07548469
ABSTRACT:
A circuit generates a boosted voltage in a semiconductor memory device, where the semiconductor memory device includes a memory cell array having a plurality of non-edge sub-arrays and at least one edge sub-array. The circuit includes a plurality of boosted voltage generators configured to generate a boosted voltage having different current driving capabilities to activate the non-edge sub-arrays and the edge sub-arrays and to supply the boosted voltage to the memory cell array.
REFERENCES:
patent: 5699289 (1997-12-01), Takenaka
patent: 5909141 (1999-06-01), Tomishima
patent: 6229753 (2001-05-01), Kono et al.
patent: 6278316 (2001-08-01), Tanzawa et al.
patent: 6449182 (2002-09-01), Ooishi
patent: 6535439 (2003-03-01), Cowles
patent: 6545918 (2003-04-01), Song
patent: 6768692 (2004-07-01), Luk et al.
patent: 6804150 (2004-10-01), Park et al.
patent: 6809573 (2004-10-01), Kim
patent: 7054211 (2006-05-01), Tsujimura et al.
patent: 102030009082 (2003-01-01), None
Lee Hong-Jun
Lee Jae-Young
Lee Jung-Hwa
Nguyen Tuan T.
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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