Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-02-27
2007-02-27
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S233100
Reexamination Certificate
active
11256357
ABSTRACT:
A circuit and method for test mode entry of a semiconductor memory device are provided. In a method of entering a semiconductor memory device into a test mode, an internal clock is generated in response to an external clock when a first condition is satisfied. An address combination signal is generated based on a first address combination and the internal clock. The semiconductor memory device is entered into the test mode using the internal clock and the address combination signal.
REFERENCES:
patent: 6353565 (2002-03-01), Ito
patent: 6400623 (2002-06-01), Ohno
patent: 7035154 (2006-04-01), Takahashi et al.
patent: 2000-215695 (2000-08-01), None
patent: 1020040003562 (2004-01-01), None
F. Chau & Associates LLC
Le Vu A.
Samsung Electronics Co,. Ltd.
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