Static information storage and retrieval – Read/write circuit – Data refresh
Patent
1997-10-27
1998-10-20
Dinh, Son T.
Static information storage and retrieval
Read/write circuit
Data refresh
365233, 395427, G11C 700
Patent
active
058257063
ABSTRACT:
When an external reset signal EXRST is asserted received by a reset unit (6), it is synchronised with an internal clock to produce an internal reset signal INRST, which is applied to a CPU (4) and other modules in the circuit to reset them. While the internal reset signal INRST is being applied to the CPU, the rate of a refresh signal being generated by a DRAM controller (7) for refreshing data in DRAM (3) is increased. Then, when the external reset signal EXRST is disabled, a delayed reset signal DLYRST is generated and applied to the DRAM controller (7) so that it is reset. The CPU, being already reset, can then quickly reconfigure the DRAM controller and re-enable it to resume refreshing the DRAM (4), thus maintaining the data in the DRAM.
REFERENCES:
patent: 5321661 (1994-06-01), Iwakiri et al.
patent: 5402384 (1995-03-01), Fujisawa
patent: 5453959 (1995-09-01), Sakuta et al.
patent: 5477491 (1995-12-01), Shirai
patent: 5537564 (1996-07-01), Hazanchuk
Chu On Ki Andrew
Kwan Wai-Kin Steven
Reed Wendy
Snowden Ralph
Yiu Hing Leung
Dinh Son T.
Hill Daniel D.
Motorola Inc.
LandOfFree
Circuit and method for retaining data in DRAM in a portable elec does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Circuit and method for retaining data in DRAM in a portable elec, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit and method for retaining data in DRAM in a portable elec will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-252735