Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-30
2000-08-15
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257370, 257903, H01L 2712, H01L 2711
Patent
active
061040665
ABSTRACT:
An improved circuit and method for gate-body transistors is provided. The improved circuit and method can accord a faster switching speed and low power consumption. The present invention capitalizes on opposing sidewalls and adjacent conductive sidewall members to conserve available surface space on the semiconductor chips. The gate and body of the transistors are biased to modify the threshold voltage of the transistor (V.sub.t). Additionally, the conductive sidewall members and a gate are biased from a single source. The structure offers performance advantages from both metal-oxide semiconductor (MOS) and bipolar junction transistor (BJT) designs. The device can be used in a variety of applications, digital and analog, wherever a more compact structure with low power consumption and fast response time is needed.
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Forbes Leonard
Noble Wendell P.
Guay John
Micro)n Technology, Inc.
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