Circuit and method for dynamically adjusting the voltages of dat

Static information storage and retrieval – Read/write circuit – Signals

Patent

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Details

365210, 365189, G11C 1140

Patent

active

044046600

ABSTRACT:
A two-phase memory circuit provides for adjusting the precharge voltage of a data line to substantially equal the threshold voltage of a sense amplifier coupled to the data line during a first phase so that a relatively small voltage change on the data line during a second phase can be detected by the sense amplifier.

REFERENCES:
patent: 3798616 (1974-03-01), Spence

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