Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2007-01-22
2009-02-24
Le, Vu A (Department: 2824)
Static information storage and retrieval
Read/write circuit
Signals
C365S233100
Reexamination Certificate
active
07495973
ABSTRACT:
A circuit and a method for controlling a write recovery time (tWR) in a semiconductor memory device are disclosed. The method according to one embodiment of the present invention includes receiving an automatic precharge write command, and generating a tWR control signal, which is delayed from a point in time when the automatic precharge write command is received to a point in time when a last data segment is written in the semiconductor memory device. Therefore, power consumption and clock noise may be reduced since an operation of a counter in the circuit for controlling the tWR may be minimized after a point in time when the last data is written.
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Jung Han-Gyun
Ko Seung-Bum
Le Vu A
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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