Circuit and method for controlling refresh periods in...

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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C365S222000

Reexamination Certificate

active

07843752

ABSTRACT:
An integrated circuit memory device includes a refresh control circuit that generates an internal memory refresh command signal having a period that is changed relative to a period of an external memory refresh command signal received by the memory device. This change in the period of the internal memory refresh command may be in response to detecting a change in temperature of the memory device. In particular, the refresh control circuit is configured so that the period of the internal memory refresh command signal is increased in response to detecting a reduction in temperature of the memory device.

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