Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-10-06
1999-05-25
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257302, 257300, H01L 27108, H01L 2994, H01L 31119, H01L 2976
Patent
active
059071702
ABSTRACT:
A memory cell. The memory cell includes an access transistor. The access transistor is formed in a pillar of single crystal semiconductor material. The transistor has first and second source/drain regions and a body region that are vertically aligned. The memory cell also includes a body contact that is coupled to the body region. A gate of the transistor is disposed on a side of the pillar that is opposite from the body contact. A trench capacitor is also included. The trench capacitor includes a first plate that is formed integral with the first source/drain region of the access transistor and a second plate that is disposed adjacent to the first plate and separated from the first plate by a gate oxide. An insulator layer that separates the access transistor and the trench capacitor from an underlying layer of semiconductor material.
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Kishimoto,
Forbes Leonard
Noble Wendell P.
Cao Phat X.
Micro)n Technology, Inc.
Monin, Jr. Donald L.
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