Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2008-04-03
2010-12-14
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S205000, C365S207000, C365S222000, C365S233170, C365S233140, C365S189050, C365S196000
Reexamination Certificate
active
07852686
ABSTRACT:
A circuit and method for a sense amplifier for sensing the charge stored when a select signal couples a memory cell to the sense amplifier. A pull up voltage and a pull down voltage are instantaneously supplied to the sense amplifier to sense the small signal differential input on the complementary bit lines and to simultaneously restore the value stored in the memory cell. A differential output signal generator circuit is provided to instantaneously supply the pull up and pull down voltages. In another preferred embodiment the signal generator provides the pull up and pull down voltages at a first level and subsequently increases the pull up voltage to a voltage greater than the positive supply voltage and decreases the pull down voltage. A method of sensing is disclosed wherein the sense and restore actions are performed instantaneously to provide memory cell sensing with greater tolerance of device mismatches.
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patent: 2007/0195624 (2007-08-01), Song
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Chung Shine
Hung Jonathan
Hidalgo Fernando N
Ho Hoai V
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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