Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-10-06
1999-06-22
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257301, H01L 27108
Patent
active
059145110
ABSTRACT:
A memory cell for a memory array in a folded bit line configuration. The memory cell includes an access transistor formed in a pillar of single crystal semiconductor material. The access transistor has first and second source/drain regions and a body region that are vertically aligned. A body contact is coupled to the body region of the access transistor that provides a body bias to the access transistor. The access transistor further includes a gate coupled to a word line disposed adjacent to the body region. A passing word line is separated from the gate by an insulator for coupling to other memory cells adjacent to the memory cell. A trench capacitor is also included. The trench capacitor includes a first plate that is formed integral with the first source/drain region of the access transistor and a second plate that is disposed adjacent to the first plate and separated from the first plate by a gate oxide.
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Forbes Leonard
Noble Wendell P.
Hughes William
Micro)n Technology, Inc.
Thomas Tom
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