Chrome mask etch

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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Details

430323, 430324, 430330, 156643, 156646, 1566571, G03C 500

Patent

active

047741643

ABSTRACT:
Patterning a chrome mask with PBS (polybutenesulfone) photoresist is enabled in a plasma reactor by covering the patterned photoresist with a glass layer, planarizing the glass layer, etching the photoresist and then etching the chrome mask. The pattern transferred to the chrome mask is the negative or inverse of the pattern in the photoresist layer.

REFERENCES:
patent: 3567447 (1971-03-01), Chand
patent: 4489146 (1984-12-01), Bock et al.
patent: 4634645 (1987-01-01), Matsuda et al.

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