Chlorofluorocarbon additives for enhancing etch rates in fluorin

Details Chlorofluorocarbon additives for enhancing etch rates in fluorin Chlorofluorocarbon additives for enhancing etch rates in fluorin

1987-11-23

1989-06-06

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 1566591, 156664, 252 791, C23F 102, C23F 112

Patent

active

048368873

ABSTRACT:
A plasma comprised of a fluorinated gas, an oxidant, and up to 15%-20% chlorofluorocarbon gas etches non-insulating materials such as tungsten and silicon at very high etch rates while providing enhanced etch rate ratios to photoresist and insulators.

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Saia et al., "Reactive Ion Etching of Refractory Metals For Gate and Interconnect Applications", Materials Research Soc. 1987.
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