Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
1999-05-10
2001-11-13
Chaudhuri, Olik (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S666000, C257S676000, C257S724000, C257S784000, C257S787000, C361S723000, C361S813000
Reexamination Certificate
active
06316825
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a stack package and method for fabricating the same, particularly the stack package is characterized in that one package consists at least two semiconductor chips stacked therein.
2. Description of the Related Art
Rapid progress in the memory chip has been presented to increase memory capacity. Currently, 128M DRAM is mass-produced, and also the mass-production of 256M DRAM will be available sooner or later.
For increasing memory chip capacity, i.e. high integration, a technology for inserting cells as many as possible into a given area of semiconductor device, is widely known. However, this method requires high technology such as a precise line width and a considerable amount of time for development. Accordingly, a relatively simpler stacking technology to optimize integrity of the semiconductor device has been developed most recently.
The term stacking used in semiconductor industry means a technique to double the memory capacity by heaping up at least two semiconductor chips in a vertical direction. According to the stacking technique, a 128M DRAM device can be constituted by two 64M DRAM devices for instance, also a 256M DRAM device can be constituted by two 128M DRAM devices.
There are various applications of the stacking such as, stacking for semiconductor devices, stacking for packages or modules. Stacking for packages means that pre-formed packages are stacked in several layers or more. This stacking is regarded as a cost-effective method. There are two types of package stacking technology. For instance, packages ready-made upon order are used and each lead of the packages is connected to its corresponding lead. The other stacking technology uses standard packages which are connected by side rails or accessories similar to the side rails.
Hereinafter, a brief description regarding the above-mentioned typical stacking technology for packages is given with reference to
FIGS. 1 and 2
.
As shown in the drawings, a bottom surface of an upper package
1
is faced with a top surface of a lower package
1
′. In the respective packages, leads
1
a,
1
b
being projected from both sides of the packages are electrically connected. Although only two packages are shown in the drawings, however more packages can be stacked. Furthermore, leads of the stack packages are connected by side rails or auxiliary accessories similar to the side rails.
However, the package as described above incurs following problems. Since two or more packages are stacked, the size of package is increased and therefore it is very difficult to handle with the package. A number of steps, mostly in molding step and forming step are also added or transformed. Particularly, it is possible to stack only provided that the leads are transformed, even when the step for forming is already performed, and sometimes it is impossible to stack due to the work condition which depends on width or space of the leads.
On the other hand, to solve the foregoing problems a stack package comprising at least two semiconductor chips in a package is disclosed in Japanese Patent Laid-open No. 62-8529, No. 62-131555 and No. 63-124450. Those references, however have following problems respectively.
The Japanese Patent Laid-open No. 62-8529 and No. 62-131555 disclose a stack package having semiconductor chips mounted on both sides of a tape automated bonding (hereinafter referred as to TAB) tape. In that structure, a wire bonding step is preferentially performed, i.e. a bonding pad disposed on one side of the semiconductor chip is connected to a lead frame by means of a metal wire. Afterward, a subsequent wire bonding step follows, i.e. another bonding pad disposed on the other side of the semiconductor chip is connected to another lead frame by means of a metal wire. While the subsequent wire bonding steps are performed, the metal wire which is already connected during the precedent wire bonding step, is often damaged.
Also, the Japanese Patent Laid-open No. 63-124450 discloses a stack package that a two-layered lead frame is molded with an epoxy compound. However, it is difficult to mass-produce the stack package as constituted above according to the currently used transfer molding technique.
In addition, the Japanese Patent Laid-open No. 63-119952 discloses a stack package having a structure that its lead frames are connected each other. However, in the stack package, it is difficult to form a lead frame for connecting lead frames which are already made before molding the structure. Moreover, this structure expands package size opposite to the high integration trend in the package industry.
SUMMARY OF THE INVENTION
The present invention is directed to provide a stack package having a superior electrical property and a method for fabricating the same. Herein, the stack package comprises at least two semiconductor chips within one package that the package can be made of the materials and fabricated by the technologies which are currently used in common resin-molding type semiconductor packages. By doing so, capacity of the package can be doubled, the package can be highly integrated, manufacturing cost thereof can be reduced and mass-production is also available.
The stack package according to the present invention, includes at least two semiconductor chips disposed up and down. Bonding pads are formed in the respective semiconductor chips along a center line. Inner leads of first and second lead frames are attached to bonding pad-disposed faces of the respective semiconductor chips. The respective inner leads are electrically connected to their corresponding bonding pads by means of metal wires and the inner lead of the first lead frame is electrically connected to the second lead frame. The entire structure is molded with an epoxy compound so as to expose a connecting part between the first and second lead frames and an outer lead of the second lead frame.
Herein, the first and second semiconductor chips can be disposed such that their bonding pad-disposed faces, or the reverse of the bonding pad-disposed faces are opposed each other. Otherwise, the bonding pad-disposed faces can be disposed upwardly or downwardly. The inner leads of the respective lead frames can be set upwardly or downwardly so as to prevent short in the metal wires.
Solder joints for aiding the electrical connection between both lead frames are formed at the second lead frame region outside of the epoxy compound to which an outer end of the first lead frame is connected. Also, semicircular, circular or rectangular shaped connecting holes are formed in an outer end of the first lead frame which is connected to the second lead frame for obtaining a large contact area of the outer end and the second lead frame. And, to avoid mismatching the corresponding lead frames, the width of the first lead frames is preferably shorter than that of the second lead frames.
The method for fabricating the stack package as constituted above will be described hereinafter.
At least two semiconductor chips having a plurality of bonding pads disposed with a regular spacing in the center region of the semiconductor chip are fabricated and prepared. First and second lead frames constituting paths for transmitting signals outwardly are fabricated and prepared. Inner leads of the respective lead frames are attached to bonding pad-disposed faces of the semiconductor chips respectively. The inner leads are electrically connected to the bonding pads by means of metal wires. A region being contacted an outer end of the first lead frame and the second lead frame is coated with a conductive adhesive. They are faced each other and are under jointing process while heating at a temperature of melting point of the conductive material. Finally, the entire structure is molded with an epoxy compound to expose an outer lead of the second lead frame.
According to the present invention, since the stack package includes at least two semiconductor chips within one package, the package can be highly integrated and can
Baik Hyung Gil
Choi Yoon Hwa
Lee Nam Soo
Park Chang Jun
Park Myung Geun
Chambliss Alonzo
Chaudhuri Olik
Hyundai Electronics Industries Co,. Ltd.
Ladas & Parry
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