Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2006-09-26
2006-09-26
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C438S114000, C257SE21599
Reexamination Certificate
active
07112470
ABSTRACT:
A semiconductor structure and method for chip dicing. The method comprises the steps of (a) providing a semiconductor substrate; (b) forming first and second device regions of first and second chips, respectively, in and at top of the semiconductor substrate, wherein the first and second chips are separated by a semiconductor border region of the semiconductor substrate; (c) forming N interconnect layers directly above the semiconductor border region and the first and second device regions, wherein N is a positive integer, wherein each layer of the N interconnect layers comprises an etchable portion directly above the semiconductor border region, and wherein the etchable portions of the N interconnect layers form a continuous etchable block; (d) removing the continuous etchable block by etching; and (e) cutting with a laser through the semiconductor border region via an empty space of the removed continuous etchable block to separate the first and second chips.
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“Two-Pass Laser Cutting”, by A. S. Shah et al., IBM Technical Disclosure Bulletin, vol. 16, No. 10, Mar. 1974.
Daubenspeck Timothy H.
Gambino Jeffrey P.
Muzzy Christopher D.
Sauter Wolfgang
Dang Trung
Sabo William D.
Schmeiser Olsen & Watts
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