Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2008-01-08
2008-01-08
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C257SE21599
Reexamination Certificate
active
07316940
ABSTRACT:
A semiconductor structure and method for chip dicing. The method includes (a) providing a semiconductor substrate and (b) forming first and second device regions in and at top of the substrate. The first and second device regions are separated by a semiconductor border region of the substrate. The method further includes (c) forming N interconnect layers, in turn, directly above the semiconductor border region and the first and second device regions. N is a positive integer greater than one. Each of the N interconnect layers includes an etchable portion directly above the semiconductor border region. The etchable portions of the N interconnect layers form a continuous etchable block directly above the semiconductor border region. The method further includes (d) removing the continuous etchable block by etching, and (e) cutting with a laser through the semiconductor border region via an empty space of the removed continuous etchable block.
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Shah et al.; “Two-Pass Laser Cutting”, IBM Technical Disclosure Bulletin, vol. 16, No. 10, Mar. 1974.
Daubenspeck Timothy H.
Gambino Jeffrey P.
Muzzy Christopher D.
Sauter Wolfgang
Dang Trung
International Business Machines - Corporation
Sabo William D.
Schmeiser Olsen & Watts
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