Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2005-01-11
2005-01-11
Chen, Bret (Department: 1762)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192120, C427S576000
Reexamination Certificate
active
06841044
ABSTRACT:
A process merges chemical vapor deposition and physical vapor deposition technologies. It allows physical and chemical vapor deposition to occur in the same process chamber, contemporaneously. The “physical” component involves creation of ionized metal atoms. Ionization is typically accomplished via a plasma within the chamber. If the metal vapor is generated by sputtering, a separate plasma generation mechanism may be employed, which is different from the mechanism employed to generate a “source plasma” for generating sputtering species (e.g., argon ions). Alternatively, a single plasma source may be employed to generate the sputtering species and provide additional ionization of the metal vapor, as is the case with hollow cathode magnetron chambers. In some cases, the CVD precursor is introduced through a first line into the process chamber, while a sputtering gas is introduced via a second line.
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Novellus Systems Inc.
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