Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-12-09
2000-02-29
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438674, 438656, 438672, 438675, H01L 2144
Patent
active
060308931
ABSTRACT:
The present invention is a chemical vapor deposition of tungsten(W-CVD)process for growing low stress and void free interconnect. The method of this invention utilizes two steps W-CVD process by two chambers. The first step, filling tungsten metal completely in the contact hole, is performed in the first chamber. The second step, forming a tungsten layer for interconnect, is performed in the second chamber. Because of using two different chambers, the method of this invention can adjust the temperature of the process and the gas flow of the WF.sub.6 vapor of the process for different required the two steps. The second step of chemical vapor deposition of tungsten by adjusting the temperature and the gas flow has reduced greatly the stress of the second conductive layer. Moreover, the first step of chemical vapor deposition of tungsten by adjusting the temperature and the gas flow prevents voids in the contact hole or in the via hole. Thus, growing low stress and voids free interconnect is accomplished by the method of this invention.
REFERENCES:
patent: 5443995 (1995-08-01), Nulman
Wolf, S. and Tauber, R.N., Silicon Processing for the VLSI Era, Lattice Press, pp. 399-404, 1986.
Ho Wen-Yu
Hsieh Sung-Chung
Lo Yung-Tsun
Tsai Cheng-Hsun
Jones J. I.
Mosel Vitelic Inc.
Niebling John F.
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