Chemical vapor deposition of tungsten silicide using silicon sub

Details Chemical vapor deposition of tungsten silicide using silicon sub Chemical vapor deposition of tungsten silicide using silicon sub

1988-10-17

1991-01-01

Morgenstern, Norman

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

4272551, 427314, 427255, 4272481, 437241, C23C 1600

Patent

active

049817230

ABSTRACT:
A process for depositing tungsten silicide films on a silicon substrate by chemical vapor deposition, comprises the steps of producing a silicon sub-fluoride by passing SiF.sub.4 over pieces of silicon heated in a tubular oven about 1200.degree.-1500.degree. K., mixing gaseous WF.sub.6 with the silicon sub-fluoride, and then immediately depositing the tungsten silicide films on said silicon substrate.

REFERENCES:
patent: 4481299 (1984-11-01), Suzuki et al.
patent: 4636401 (1987-11-01), Yamazaki et al.
patent: 4684542 (1987-08-01), Jasinski et al.

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