Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-01-02
1999-08-31
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438656, 438680, 438683, H01L 214763
Patent
active
059465948
ABSTRACT:
A new process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5. The reaction gases for the improved process are titanium tetrachloride and a hydrocarbon gas, which for a preferred embodiment of the process is methane. The reaction is carried out in a plasma environment created by a radio frequency source greater than 10 KHz. The key to obtaining titanium metal as a reaction product, rather than titanium carbide, is to set the plasma sustaining electrical power within a range that will remove just one hydrogen atom from each molecule of the hydrocarbon gas. In a preferred embodiment of the process, highly reactive methyl radicals (CH.sub.3 --) are formed from methane gas. These radicals attack the titanium-chlorine bonds of the tetrachloride molecule and form chloromethane, which is evacuated from the chamber as it is formed. Titanium metal deposits on a wafer or other substrate that has been heated to a temperature within a preferred range of 200-500.degree. C.
REFERENCES:
patent: 4925813 (1990-05-01), Autier et al.
patent: 5052339 (1991-10-01), Vakerlis et al.
patent: 5094711 (1992-03-01), Narasimhan et al.
patent: 5344792 (1994-09-01), Sandhu et al.
patent: 5645900 (1997-07-01), Ong et al.
patent: 5665431 (1997-09-01), Narasimhan
Iyer Ravi
Sharan Sujit
Berry Renee R.
Bowers Charles
Micro)n Technology, Inc.
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